Singh, Neha, Manipal University Jaipur, India
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Vol 10, No 6: December 2021 - Electronics Device and Semiconductor
A 9T FinFET SRAM cell for ultra-low power application in the subthreshold regime
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Bulletin of Electrical Engineering and Informatics (BEEI)
ISSN: 2089-3191, e-ISSN: 2302-9285
This journal is published by the Institute of Advanced Engineering and Science (IAES) in collaboration with Intelektual Pustaka Media Utama (IPMU).